Electronic Properties of Sn- or Ge-Doped In2O3 Semiconductors
The thermoelectric power and Hall effect of In2O3 single crystals, either undoped or Sn doped, and of In2O3 ceramics, either undoped or Sn or Ge doped, are investigated. All doped samples have negative thermoelectric power values. The metal-type conductivity occurs when the carrier concentration exc...
Tallennettuna:
| Päätekijät: | , |
|---|---|
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
Wiley
1993-01-01
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| Sarja: | Active and Passive Electronic Components |
| Linkit: | http://dx.doi.org/10.1155/1993/82760 |
| Tagit: |
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