High-Quality Aligned GaN/ZnO Nanowires Grown by Thermal Evaporation for UV Detector Application
Gallium nitride (GaN) nanowires (NWs) were grown on Zinc oxide/silicon (ZnO/Si) (1 substrate(100) by thermal evaporation method. The magnetron sputtering technique was used to deposit ZnO thin film. High-density nanostructured GaN was formed as shown in the scanning electron microscopy image. X-ray...
שמור ב:
| מחבר ראשי: | |
|---|---|
| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
University of Kufa
2017-06-01
|
| סדרה: | Journal of Kufa-Physics |
| גישה מקוונת: | https://journal.uokufa.edu.iq/index.php/jkp/article/view/7343 |
| תגים: |
אין תגיות, היה/י הראשונ/ה לתייג את הרשומה!
|