High-Quality Aligned GaN/ZnO Nanowires Grown by Thermal Evaporation for UV Detector Application
Gallium nitride (GaN) nanowires (NWs) were grown on Zinc oxide/silicon (ZnO/Si) (1 substrate(100) by thermal evaporation method. The magnetron sputtering technique was used to deposit ZnO thin film. High-density nanostructured GaN was formed as shown in the scanning electron microscopy image. X-ray...
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| Hlavní autor: | |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
University of Kufa
2017-06-01
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| Edice: | Journal of Kufa-Physics |
| On-line přístup: | https://journal.uokufa.edu.iq/index.php/jkp/article/view/7343 |
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