Transport in a Two-Channel Nanotransistor Device with Lateral Resonant Tunneling
We study field effect nanotransistor devices in the Si/SiO<sub>2</sub> material system which are based on lateral resonant tunneling between two parallel conduction channels. After introducing a simple piecewise linear potential model, we calculate the quantum transport properties in the R-matrix ap...
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| Autori principali: | , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
MDPI AG
2024-10-01
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| Serie: | Micromachines |
| Soggetti: | |
| Accesso online: | https://www.mdpi.com/2072-666X/15/10/1270 |
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