Design of energy-efficient hybrid STT-MTJ/CMOS-based LIM logic gates for IoT applications
Complementary Metal Oxide Silicon (CMOS) technology faces a major concern in power dissipation due to the scale-down of technology nodes to the nanoscale. To, resolve this problem, logic-in-memory (LIM) structures are researched as a solution. A spintronics device called magnetic tunnel junction (MT...
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| Autors principals: | , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Elsevier
2024-04-01
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| Col·lecció: | Measurement: Sensors |
| Matèries: | |
| Accés en línia: | http://www.sciencedirect.com/science/article/pii/S2665917424000394 |
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