Design of energy-efficient hybrid STT-MTJ/CMOS-based LIM logic gates for IoT applications

Complementary Metal Oxide Silicon (CMOS) technology faces a major concern in power dissipation due to the scale-down of technology nodes to the nanoscale. To, resolve this problem, logic-in-memory (LIM) structures are researched as a solution. A spintronics device called magnetic tunnel junction (MT...

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Bibliografiske detaljer

Principais autores:	N. Aswathy, N.M. Sivamangai, A. Napolean, T. Jarin
Format:	Artigo
Sprog:	Inglês
Udgivet:	Elsevier 2024-04-01
Serier:	Measurement: Sensors
Fag:	Logic-in-memory (LIM) Magnetic tunnel junction Pre-charge sense amplifier Spin-transfer torque
Online adgang:	http://www.sciencedirect.com/science/article/pii/S2665917424000394
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