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Fabrication of Highly Resistive NiO Thin Films for Nanoelectronic Applications

Abstract Thin films of the prototypical charge transfer insulator nickel oxide appear to be a promising material for novel nanoelectronic devices. The fabrication of the material is challenging, however, and mostly a p‐type semiconducting phase is reported. Here, the results of a factorial experimen...

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Principais autores: Johannes Mohr, Tyler Hennen, Daniel Bedau, Joyeeta Nag, Rainer Waser, Dirk J. Wouters
Format: Artigo
Jezik:Inglês
Izdano: Wiley-VCH 2022-12-01
Serija:Advanced Physics Research
Teme:
Online dostop:https://doi.org/10.1002/apxr.202200008
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