Volume Contraction Upon Resistive Switching in Cr‐Doped V2O3 as a Key Mechanism for Mottronics Applications

Abstract The rise of the electronic age sparked a quest for increasingly faster and smaller switches, since this element is ubiquitous and foundational in any electronic circuit to regulate the flow of current. Mott insulators are promising candidates to meet this need as they undergo extremely fast...

Disgrifiad llawn

Manylion Llyfryddiaeth

Prif Awduron:	Danylo Babich, Julien Tranchant, Coline Adda, Benoit Corraze, Marie‐Paule Besland, Peter Warnicke, Daniel Bedau, Patricia Bertoncini, Jean‐Yves Mevellec, Bernard Humbert, Jonathan Rupp, Tyler Hennen, Dirk Wouters, Roger Llopis, Laurent Cario, Etienne Janod
Fformat:	Artigo
Iaith:	Inglês
Cyhoeddwyd:	Wiley-VCH 2025-11-01
Cyfres:	Advanced Electronic Materials
Pynciau:	metal‐insulator transition Mott insulator resistive switching
Mynediad Ar-lein:	https://doi.org/10.1002/aelm.202500077
Tagiau:	Ychwanegu Tag Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!