Volume Contraction Upon Resistive Switching in Cr‐Doped V2O3 as a Key Mechanism for Mottronics Applications

Abstract The rise of the electronic age sparked a quest for increasingly faster and smaller switches, since this element is ubiquitous and foundational in any electronic circuit to regulate the flow of current. Mott insulators are promising candidates to meet this need as they undergo extremely fast...

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Bibliographic Details

Main Authors:	Danylo Babich, Julien Tranchant, Coline Adda, Benoit Corraze, Marie‐Paule Besland, Peter Warnicke, Daniel Bedau, Patricia Bertoncini, Jean‐Yves Mevellec, Bernard Humbert, Jonathan Rupp, Tyler Hennen, Dirk Wouters, Roger Llopis, Laurent Cario, Etienne Janod
Format:	Artigo
Language:	Inglês
Published:	Wiley-VCH 2025-11-01
Series:	Advanced Electronic Materials
Subjects:	metal‐insulator transition Mott insulator resistive switching
Online Access:	https://doi.org/10.1002/aelm.202500077
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