An 0.4–2.8 GHz CMOS Power Amplifier With On-Chip Broadband-Pre-Distorter (BPD) Achieving 36.1–38.6% PAE and 21 dBm Maximum Linear Output Power

A broadband 180 nm CMOS power amplifier (PA) operating from a frequency bandwidth of 400 MHz to 2.8 GHz is presented in this paper. The PA is integrated with an inductor-less Broadband-Pre-Distorter (BPD) to enhance its linearity for wide bandwidth. The BPD consists only of MOS transistors, resistor...

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Hlavní autoři:	Selvakumar Mariappan, Jagadheswaran Rajendran, Yusman M. Yusof, Norlaili M. Noh, Binboga Siddik Yarman
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	IEEE 2021-01-01
Edice:	IEEE Access
Témata:	Complementary metal oxide semiconductor (CMOS) power amplifier (PA) broadband pre-distorter power added efficiency (PAE) transceiver
On-line přístup:	https://ieeexplore.ieee.org/document/9385133/
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