A 0.8 mm² Sub-GHz GaAs HBT Power Amplifier for 5G Application Achieving 57.5% PAE and 28.5 dBm Maximum Linear Output Power

This paper presents a comprehensive design of a fully integrated multistage GaAs HBT power amplifier that achieves both linearity and high efficiency within a chip area of 0.855 mm² for 4G and 5G applications covering the lower frequency band of 700-800 MHz. A novel linearizer circuit is...

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Autores principales:	Ram Sharma Nitesh, Jagadheswaran Rajendran, Harikrishnan Ramiah, Binboga Siddik Yarman
Formato:	Artigo
Lenguaje:	Inglês
Publicado:	IEEE 2019-01-01
Colección:	IEEE Access
Materias:	Power amplifier analog pre-distorter (APD) linearizer Gallium–Arsenide (GaAs) hetero-junction bipolar transistor (HBT) multi stage
Acceso en línea:	https://ieeexplore.ieee.org/document/8882289/
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