SnO<sub>2</sub>-Pd as a Gate Material for the Capacitor Type Gas Sensor
The article describes the result of the use SnO<sub>2</sub>-Pd thin films as a gate for structure measured ppb range of NO<sub>2</sub> gas by the capacitive method. The technological aspects of fabrication SnO<sub>2</sub>-Pd gate and one comparison by metrological parameters with the classical Pd ga...
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| Autors principals: | , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI AG
2019-06-01
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| Col·lecció: | Proceedings |
| Matèries: | |
| Accés en línia: | https://www.mdpi.com/2504-3900/14/1/10 |
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