Electrostatics, scaling, and variability in stacked graphene nanoribbon FETs without metal interlayers
We present a self-consistent quantum transport simulation of vertically stacked graphene nanoribbon gate-all-around (GAA) field-effect transistors (FETs) without metal interlayers, focusing on the interplay between electrostatics, scaling behavior, and device variability. Removing gate metal interla...
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| Autors principals: | , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
AIP Publishing LLC
2025-10-01
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| Col·lecció: | APL Electronic Devices |
| Accés en línia: | https://pubs.aip.org/aip/aed/article-pdf/doi/10.1063/5.0292026/20725407/046107_1_5.0292026.pdf |
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