Electrostatics, scaling, and variability in stacked graphene nanoribbon FETs without metal interlayers

We present a self-consistent quantum transport simulation of vertically stacked graphene nanoribbon gate-all-around (GAA) field-effect transistors (FETs) without metal interlayers, focusing on the interplay between electrostatics, scaling behavior, and device variability. Removing gate metal interla...

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Hlavní autoři:	Paul Jonghyuk Park, Mayuri Sritharan, Christopher Phillips, Youngki Yoon
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	AIP Publishing LLC 2025-10-01
Edice:	APL Electronic Devices
On-line přístup:	https://pubs.aip.org/aip/aed/article-pdf/doi/10.1063/5.0292026/20725407/046107_1_5.0292026.pdf
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