Effects of Fast Neutron Irradiation on Switching of Silicon Bipolar Junction Transistor
Background When bipolar junction transistors (BJTs) are used as switches, their switching characteristics can be deteriorated because the recombination time of the minority carriers is long during turn-off transient. When BJTs operate as low frequency switches, the power dissipation in the on-state...
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| Autors principals: | , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Korean Association of Radiation Protection
2023-09-01
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| Col·lecció: | Journal of Radiation Protection and Research |
| Matèries: | |
| Accés en línia: | http://jrpr.org/upload/pdf/jrpr-2023-00059.pdf |
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