INFLUENCE OF GAMMA RADIATION ON MOS/SOI TRANSISTORS
The results of experimental researches of influence of gamma radiation Со60 on test MOS/SOI transistors with different constructive-technologic features and electrical modes are submitted.
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| Principais autores: | , , , , |
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| Format: | Artigo |
| Sprog: | Russo |
| Udgivet: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2019-06-01
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| Serier: | Доклады Белорусского государственного университета информатики и радиоэлектроники |
| Fag: | |
| Online adgang: | https://doklady.bsuir.by/jour/article/view/653 |
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