Tuning the electrical parameters of non-stoichiometric gallium oxide-based memristor
Abstract In this work, we investigate the electrical performance of gallium oxide-based memristors by tuning the stoichiometry. Three variants of gallium oxide-based memristors (Ga₂O₃, Ga₂O3−x, Ga₂Oₓ where x = 1.1) with titanium (Ti) as top electrode and copper (Cu) as the bottom electrode are model...
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| Autors principals: | , , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Springer
2025-10-01
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| Col·lecció: | Discover Materials |
| Matèries: | |
| Accés en línia: | https://doi.org/10.1007/s43939-025-00368-7 |
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