High‐Throughput Exploration of Phase Evolution in (Pb1−XBaX)ZrO3 Thin Films
Abstract Antiferroelectric thin films hold significant potential for bringing novel physics phenomena and fascinating properties. Their applications are often intertwined with the antiferroelectric‐ferroelectric phase transition, which is contingent on the chemical compositions of the constituent ma...
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| Autors principals: | , , , , , , , , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Wiley-VCH
2024-04-01
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| Col·lecció: | Advanced Electronic Materials |
| Matèries: | |
| Accés en línia: | https://doi.org/10.1002/aelm.202300746 |
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