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High‐Throughput Exploration of Phase Evolution in (Pb1−XBaX)ZrO3 Thin Films

Abstract Antiferroelectric thin films hold significant potential for bringing novel physics phenomena and fascinating properties. Their applications are often intertwined with the antiferroelectric‐ferroelectric phase transition, which is contingent on the chemical compositions of the constituent ma...

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Principais autores: Peipei Su, Chuanlai Ren, Lingping Zeng, Feng An, Minghuan Li, Qianxin Chen, Yuan Zhang, Yangchun Tan, Jinbin Wang, Xiangli Zhong, Mingqiang Huang, Gaokuo Zhong
Formato: Artigo
Idioma:Inglês
Publicado em: Wiley-VCH 2024-04-01
Colecção:Advanced Electronic Materials
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Acesso em linha:https://doi.org/10.1002/aelm.202300746
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