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Solution Processed Hybrid Polymer: HgTe Quantum Dot Phototransistor with High Sensitivity and Fast Infrared Response up to 2400 nm at Room Temperature

Abstract Narrow bandgap semiconductor‐based photodetectors often suffer from high room‐temperature noise and are therefore operated at low temperatures. Here, a hybrid poly(3‐hexylthiophene) (P3HT): HgTe quantum dot (QD) phototransistor is reported, which exhibits high sensitivity and fast photodete...

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Principais autores: Yifan Dong, Mengyu Chen, Wai Kin Yiu, Qiang Zhu, Guodong Zhou, Stephen V. Kershaw, Ning Ke, Ching Ping Wong, Andrey L. Rogach, Ni Zhao
Formato: Artigo
Idioma:Inglês
Publicado em: Wiley 2020-06-01
coleção:Advanced Science
Assuntos:
HgTe quantum dots
infrared photodetection
IR photodetection
phototransistors
poly(3‐hexylthiophene)
Acesso em linha:https://doi.org/10.1002/advs.202000068
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