Solution Processed Hybrid Polymer: HgTe Quantum Dot Phototransistor with High Sensitivity and Fast Infrared Response up to 2400 nm at Room Temperature

Abstract Narrow bandgap semiconductor‐based photodetectors often suffer from high room‐temperature noise and are therefore operated at low temperatures. Here, a hybrid poly(3‐hexylthiophene) (P3HT): HgTe quantum dot (QD) phototransistor is reported, which exhibits high sensitivity and fast photodete...

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Hlavní autoři:	Yifan Dong, Mengyu Chen, Wai Kin Yiu, Qiang Zhu, Guodong Zhou, Stephen V. Kershaw, Ning Ke, Ching Ping Wong, Andrey L. Rogach, Ni Zhao
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	Wiley 2020-06-01
Edice:	Advanced Science
Témata:	HgTe quantum dots infrared photodetection IR photodetection phototransistors poly(3‐hexylthiophene)
On-line přístup:	https://doi.org/10.1002/advs.202000068
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