Impact of Technology Scaling and Back-End-of-the-Line Technology Solutions on Magnetic Random-Access Memories

While magnetic random-access memories (MRAMs) are promising because of their nonvolatility, relatively fast speeds, and high endurance, there are major challenges in adopting them for the advanced technology nodes. One of the major challenges in scaling MRAM devices is caused by the ever-increasing...

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Autori principali:	Piyush Kumar, Da Eun Shim, Siri Narla, Azad Naeemi
Natura:	Artigo
Lingua:	Inglês
Pubblicazione:	IEEE 2024-01-01
Serie:	IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Soggetti:	Back-end-of-the-line (BEOL) interconnect magnetic random-access memory (MRAM) spin-orbit torque (SOT) spin-transfer torque (STT)
Accesso online:	https://ieeexplore.ieee.org/document/10412202/
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