Impact of Technology Scaling and Back-End-of-the-Line Technology Solutions on Magnetic Random-Access Memories
While magnetic random-access memories (MRAMs) are promising because of their nonvolatility, relatively fast speeds, and high endurance, there are major challenges in adopting them for the advanced technology nodes. One of the major challenges in scaling MRAM devices is caused by the ever-increasing...
সংরক্ষণ করুন:
| প্রধান লেখক: | , , , |
|---|---|
| বিন্যাস: | Artigo |
| ভাষা: | Inglês |
| প্রকাশিত: |
IEEE
2024-01-01
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| মালা: | IEEE Journal on Exploratory Solid-State Computational Devices and Circuits |
| বিষয়গুলি: | |
| অনলাইন ব্যবহার করুন: | https://ieeexplore.ieee.org/document/10412202/ |
| ট্যাগগুলো: |
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