Schottky Contact of Gallium on p-Type Silicon
The evolution of barrier at Schottky contact and its stabilization to value characterized by the barrier height and unambiguous measurement is still being curiously perused as they hold the key control and manufacture of tailor made Schottky devices for a host of existing and potential for future ap...
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| Huvudupphov: | , |
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| Materialtyp: | Artigo |
| Språk: | Inglês |
| Utgiven: |
Sumy State University
2011-01-01
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| Serie: | Журнал нано- та електронної фізики |
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| Länkar: | http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%204/articles/jnep_2011_V3_N1(Part4)_684-690.pdf |
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