Unlocking n-type semiconductivity in diamond: A breakthrough approach via surface metal doping
Device applications of ultra-wide bandgap diamond rely on controlled carrier types and concentrations, yet conventional n-type doping in diamond has been challenging due to its strong covalent bonds. Surface charge transfer doping (SCTD) provides an effective alternative, utilizing energy level diff...
保存先:
| 主要な著者: | , , , , , |
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| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
AIP Publishing LLC
2024-12-01
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| シリーズ: | APL Materials |
| オンライン･アクセス: | http://dx.doi.org/10.1063/5.0245733 |
| タグ: |
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