Plasma-Etched Black GaAs Nanoarrays with Gradient Refractive Index Profile for Broadband, Omnidirectional, and Polarization-Independent Antireflection

Black GaAs nanotip arrays (NTs) with 3300 nm lengths were fabricated via self-masked plasma etching. We show, both experimentally and numerically, that these NTs, with three gradient refractive index layers, effectively suppress Fresnel reflections at the air–GaAs interface over a broad range of wav...

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Bibliografische Detailangaben

Hauptverfasser:	Yi-Fan Huang, Yi-Jun Jen, Varad A. Modak, Li-Chyong Chen, Kuei-Hsien Chen
Format:	Artigo
Sprache:	Inglês
Veröffentlicht:	MDPI AG 2024-07-01
Schriftenreihe:	Nanomaterials
Schlagworte:	black GaAs NTs gradient refractive index polarization-independent antireflection
Online-Zugang:	https://www.mdpi.com/2079-4991/14/13/1154
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