IGBT Power Module Design for Suppressing Gate Voltage Spike at Digital Gate Control
This paper clarifies the effect of gate inductance <inline-formula> <tex-math notation="LaTeX">$L_{g}$ </tex-math></inline-formula> inside IGBT modules on gate voltage spikes when a digital gate driver is employed. Three IGBT modules with different <inline-formula> <tex-math notation="LaTeX">$L_{g}$...
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| Hauptverfasser: | , , , , , |
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| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
IEEE
2023-01-01
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| Schriftenreihe: | IEEE Access |
| Schlagworte: | |
| Online-Zugang: | https://ieeexplore.ieee.org/document/10018193/ |
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