The Road to a Robust and Affordable SiC Power MOSFET Technology
This article provides a detailed study of performance and reliability issues and trade-offs in silicon carbide (SiC) power MOSFETs. The reliability issues such as threshold voltage variation across devices from the same vendor, instability of threshold voltage under positive and negative gate bias,...
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| Principais autores: | , , , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI AG
2021-12-01
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| coleção: | Energies |
| Assuntos: | |
| Acesso em linha: | https://www.mdpi.com/1996-1073/14/24/8283 |
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