Structural Influence on Radiation-induced Single-event Effects in SiC MOSFETs: Comparative Analysis of Planar and Trench Designs
The single-event susceptibility of three silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power devices structures (planar, trench and double trench) is researched by the technology computer-aided design (TCAD) simulation. Comparative analysis of the heavy-ion irradia...
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| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
Editorial Board of Atomic Energy Science and Technology
2026-03-01
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| Collection: | Yuanzineng kexue jishu |
| Sujets: | |
| Accès en ligne: | https://yznkxjs.xml-journal.net/article/doi/10.7538/yzk.2025.youxian.0449 |
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