Electrophysical characteristics of initial and irradiated GаAsP LEDs structures
ight emitting diodes based on gallium arsenide-phosphide solid solutions were studied. Negative differential resistance regions were identified at lower temperatures T ≤ 130 K. Irradiation of diodes by electrons (E = 2 MeV) leads to the increase in the differential resistance, change in the contact...
Na minha lista:
| Principais autores: | , , , , , |
|---|---|
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Institute for Nuclear Research, National Academy of Sciences of Ukraine
2019-06-01
|
| coleção: | Ядерна фізика та енергетика |
| Assuntos: | |
| Acesso em linha: | http://jnpae.kinr.kiev.ua/20.2/html/20.2.0164.html |
| Tags: |
Sem tags, seja o primeiro a adicionar uma tag!
|