Structural Properties and Energy Band Alignment of Crystalline AlN Grown by Atomic Layer Deposition on Epitaxial Graphene

In this work, the atomic layer deposition (ALD) of an ultra-thin AlN film on the surface of monolayer EG grown on-axis 4H-SiC(0001) substrates has been investigated as a function of the number of ALD cycles. The formation of a homogeneous film with a 10 nm thickness and crystalline wurtzite structur...

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Egile Nagusiak:	Emanuela Schilirò, Salvatore Ethan Panasci, Raffaella Lo Nigro, Fabrizio Roccaforte, Blagoy Blagoev, Vladimir Mehandzhiev, Borislava Georgieva, Ivalina Avramova, Rositsa Yakimova, Milena Beshkova, Filippo Giannazzo
Formatua:	Artigo
Hizkuntza:	Inglês
Argitaratua:	MDPI AG 2026-05-01
Saila:	Nanomaterials
Gaiak:	atomic layer deposition aluminum nitride epitaxial graphene
Sarrera elektronikoa:	https://www.mdpi.com/2079-4991/16/11/659
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