Influence of the Al-ion implantation temperature in 4H-SiC on the activation rate and the quality of the subsequent thermal oxide
To optimize the channel doping process and gate oxide reliability of planar 4H-SiC MOSFETs, this study systematically investigates the influence of aluminum ion implantation temperature (25 °C vs. 500 °C) on dopant distribution and the quality of the subsequently thermally grown oxide layer. Through...
Kaydedildi:
| Asıl Yazarlar: | , , , , , , , , |
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| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
Elsevier
2026-06-01
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| Seri Bilgileri: | Materials Letters: X |
| Konular: | |
| Online Erişim: | http://www.sciencedirect.com/science/article/pii/S2590150826000050 |
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