High Linearity Synaptic Devices Using Ar Plasma Treatment on HfO₂ Thin Film with Non-Identical Pulse Waveforms

We enhanced the device uniformity for reliable memory performances by increasing the device surface roughness by exposing the HfO₂ thin film surface to argon (Ar) plasma. The results showed significant improvements in electrical and synaptic properties, including memory window, linearity,...

Ausführliche Beschreibung

Bibliografische Detailangaben

Hauptverfasser:	Ke-Jing Lee, Yu-Chuan Weng, Li-Wen Wang, Hsin-Ni Lin, Parthasarathi Pal, Sheng-Yuan Chu, Darsen Lu, Yeong-Her Wang
Format:	Artigo
Sprache:	Inglês
Veröffentlicht:	MDPI AG 2022-09-01
Schriftenreihe:	Nanomaterials
Schlagworte:	electrical synapse synaptic plasticity argon plasma treatment non-identical pulse waveforms
Online-Zugang:	https://www.mdpi.com/2079-4991/12/18/3252
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