High Linearity Synaptic Devices Using Ar Plasma Treatment on HfO₂ Thin Film with Non-Identical Pulse Waveforms

We enhanced the device uniformity for reliable memory performances by increasing the device surface roughness by exposing the HfO₂ thin film surface to argon (Ar) plasma. The results showed significant improvements in electrical and synaptic properties, including memory window, linearity,...

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Ngā kaituhi matua:	Ke-Jing Lee, Yu-Chuan Weng, Li-Wen Wang, Hsin-Ni Lin, Parthasarathi Pal, Sheng-Yuan Chu, Darsen Lu, Yeong-Her Wang
Hōputu:	Artigo
Reo:	Inglês
I whakaputaina:	MDPI AG 2022-09-01
Rangatū:	Nanomaterials
Ngā marau:	electrical synapse synaptic plasticity argon plasma treatment non-identical pulse waveforms
Urunga tuihono:	https://www.mdpi.com/2079-4991/12/18/3252
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