Effect of Al2O3 interlayers on the microstructure and electrical response of ferroelectric doped HfO2 thin films
Novel devices based on ferroelectric hafnium oxide comply with the increasing demand for highly scalable embedded non-volatile memory devices, especially for in-memory computing applications. However, due to the polycrystalline nature of these hafnium oxide films, highly scaled devices face variabil...
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| Hoofdauteurs: | , , , , |
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| Formaat: | Artigo |
| Taal: | Inglês |
| Gepubliceerd in: |
Frontiers Media S.A.
2022-08-01
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| Reeks: | Frontiers in Nanotechnology |
| Onderwerpen: | |
| Online toegang: | https://www.frontiersin.org/articles/10.3389/fnano.2022.900379/full |
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