Perspectives of Ferroelectric Wurtzite AlScN: Material Characteristics, Preparation, and Applications in Advanced Memory Devices

Ferroelectric, phase-change, and magnetic materials are considered promising candidates for advanced memory devices. Under the development dilemma of traditional silicon-based memory devices, ferroelectric materials stand out due to their unique polarization properties and diverse manufacturing tech...

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Bibliografski detalji

Glavni autori:	Haiming Qin, Nan He, Cong Han, Miaocheng Zhang, Yu Wang, Rui Hu, Jiawen Wu, Weijing Shao, Mohamed Saadi, Hao Zhang, Youde Hu, Yi Liu, Xinpeng Wang, Yi Tong
Format:	Artigo
Jezik:	Inglês
Izdano:	MDPI AG 2024-06-01
Serija:	Nanomaterials
Teme:	ferroelectric wurtzite AlScN
Online pristup:	https://www.mdpi.com/2079-4991/14/11/986
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