Impact ionization and the paradox of defects in transition metal dichalcogenide FETs
Abstract For developing high-performance, reliable, and robust electronic devices, fundamental analysis of the hot carrier dynamics, high field transport, and electrical breakdown mechanisms in transition metal dichalcogenide field effect transistors is essential, which is largely unknown. In this p...
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| Principais autores: | , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Portfolio
2025-03-01
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| coleção: | npj 2D Materials and Applications |
| Acesso em linha: | https://doi.org/10.1038/s41699-024-00521-5 |
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