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50 eV O+ ion induced deposition of tin dioxide using tetramethyltin

The aim of the present study was to deposit tin oxide films on Si wafers or quartz crystal microbalance plates acting as substrates, using low-energy ion beams. The substrates were held at ambient temperature and two different methods were employed. In one case, the substrates were exposed to a 100 ...

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Hlavní autoři: Satoru Yoshimura, Takae Takeuchi, Masato Kiuchi
Médium: Artigo
Jazyk:Inglês
Vydáno: Elsevier 2025-02-01
Edice:Heliyon
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On-line přístup:http://www.sciencedirect.com/science/article/pii/S2405844025008229
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