50 eV O+ ion induced deposition of tin dioxide using tetramethyltin
The aim of the present study was to deposit tin oxide films on Si wafers or quartz crystal microbalance plates acting as substrates, using low-energy ion beams. The substrates were held at ambient temperature and two different methods were employed. In one case, the substrates were exposed to a 100 ...
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| Автори: | , , |
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| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
Elsevier
2025-02-01
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| Серія: | Heliyon |
| Предмети: | |
| Онлайн доступ: | http://www.sciencedirect.com/science/article/pii/S2405844025008229 |
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