Photosensitive AlGaAs / GaAs Structures Grown by Molecular Beam Epitaxy
AlGaAs / GaAs photosensitive structures were grown by molecular beam epitaxy and photodetector devices were fabricated. The structures were characterized by reflection high-energy electron diffraction (RHEED), reflectance anisotropy spectroscopy (RAS) and atomic force microscopy (AFM). Spectral char...
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| Asıl Yazarlar: | , , , , , , , |
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| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
Sumy State University
2014-07-01
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| Seri Bilgileri: | Журнал нано- та електронної фізики |
| Konular: | |
| Online Erişim: | http://jnep.sumdu.edu.ua/download/numbers/2014/3/articles/jnep_2014_V6_03019.pdf |
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