Towards the Growth of Hexagonal Boron Nitride on Ge(001)/Si Substrates by Chemical Vapor Deposition
The growth of hexagonal boron nitride (hBN) on epitaxial Ge(001)/Si substrates via high-vacuum chemical vapor deposition from borazine is investigated for the first time in a systematic manner. The influences of the process pressure and growth temperature in the range of 10<sup>−7</sup>–10<sup>−3</s...
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| Principais autores: | , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
MDPI AG
2022-09-01
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| Series: | Nanomaterials |
| Assuntos: | |
| Acceso en liña: | https://www.mdpi.com/2079-4991/12/19/3260 |
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