Modeling and validation of magnetic tunnel junction device
We have presented here a simple model of magnetic tunnel junction（MTJ）device and the proposed MTJ model is utilized for validation purpose and also to study its tunnel magneto-resistance（TMR）effect by both simulation and experimental method using an operational amplifier（OPAMP）based inverting amplif...
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| Autors principals: | , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Publishing Center of North University of China
2017-01-01
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| Col·lecció: | Journal of Measurement Science and Instrumentation |
| Matèries: | |
| Accés en línia: | http://jmsi.publish.founderss.cn/thesisDetails?columnId=47039113&Fpath=home&index=0 |
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