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Modeling and validation of magnetic tunnel junction device

We have presented here a simple model of magnetic tunnel junction(MTJ)device and the proposed MTJ model is utilized for validation purpose and also to study its tunnel magneto-resistance(TMR)effect by both simulation and experimental method using an operational amplifier(OPAMP)based inverting amplif...

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Gorde:
Xehetasun bibliografikoak
Egile Nagusiak: Joyanto Roychoudhary, Sumitesh Majumder, T K Maiti
Formatua: Artigo
Hizkuntza:Inglês
Argitaratua: Publishing Center of North University of China 2017-01-01
Saila:Journal of Measurement Science and Instrumentation
Gaiak:
Sarrera elektronikoa:http://jmsi.publish.founderss.cn/thesisDetails?columnId=47039113&Fpath=home&index=0
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