Intensive measures of luminescence in GaN/InGaN heterostructures.
The intensive measures of luminescence in a GaN/InGaN multiple quantum well system are used to examine the thermodynamics and phenomenological structure. The radiative /nonradiative transitions along with absorbed or emitted phonons that occur between the different quantum states of the electrons an...
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| Principais autores: | , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Public Library of Science (PLoS)
2019-01-01
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| coleção: | PLoS ONE |
| Acesso em linha: | https://doi.org/10.1371/journal.pone.0222928 |
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