Kinetics of N‐ to M‐Polar Switching in Ferroelectric Al1−xScxN Capacitors

Abstract Ferroelectric wurtzite‐type aluminum scandium nitride (Al1−xScxN) presents unique properties that can enhance the performance of non‐volatile memory technologies. The realization of the full potential of Al1−xScxN requires a comprehensive understanding of the mechanism of polarization rever...

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Bibliografski detalji

Glavni autori:	Roberto Guido, Haidong Lu, Patrick D. Lomenzo, Thomas Mikolajick, Alexei Gruverman, Uwe Schroeder
Format:	Artigo
Jezik:	Inglês
Izdano:	Wiley 2024-04-01
Serija:	Advanced Science
Teme:	aluminum scandium nitride domains ferroelectricity piezoresponse force microscopy switching kinetics
Online pristup:	https://doi.org/10.1002/advs.202308797
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