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Kinetics of N‐ to M‐Polar Switching in Ferroelectric Al1−xScxN Capacitors

Abstract Ferroelectric wurtzite‐type aluminum scandium nitride (Al1−xScxN) presents unique properties that can enhance the performance of non‐volatile memory technologies. The realization of the full potential of Al1−xScxN requires a comprehensive understanding of the mechanism of polarization rever...

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Bibliografiska uppgifter
Huvudupphov: Roberto Guido, Haidong Lu, Patrick D. Lomenzo, Thomas Mikolajick, Alexei Gruverman, Uwe Schroeder
Materialtyp: Artigo
Språk:Inglês
Utgiven: Wiley 2024-04-01
Serie:Advanced Science
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Länkar:https://doi.org/10.1002/advs.202308797
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