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Characterization of Below-Bandgap Absorption in Type II GaSb Quantum Dots in GaAs Solar Cells

An approach to derive the below-bandgap absorption in GaSb/GaAs self-assembled quantum dot devices using room-temperature external quantum efficiency measurement results is presented. Devices with five layers of delta-doped quantum dots placed in the intrinsic, n- and p-regions of a GaAs solar cell...

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Main Authors: Juanita Saroj James, Hiromi Fujita, Peter J. Carrington, Andrew R. J. Marshall, Susan Krier, Anthony Krier
Format: Artigo
Language:Inglês
Published: MDPI AG 2024-07-01
Series:Physics
Subjects:
solar cells
quantum dots
molecular beam epitaxy
gallium antimonide
photocurrent
delta doping
Online Access:https://www.mdpi.com/2624-8174/6/3/60
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