Stochastic behaviors of electrons through atom-vacancy defects in few atom-layer MoS2-FETs and neuromorphic device application

Atom-vacancy defects existing in various materials yield numerous physical phenomena, hindering high performance in electronic and photonic devices in some cases. These become more significant in two-dimensional (2D) (atomically) thin van der Waals (vdW) layers. Meanwhile, their applications to nove...

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Bibliografische gegevens

Hoofdauteurs:	K. Takaki, S. Furuichi, M. Kosugi, H. Arisawa, Y.-C. Lin, T. Taniguchi, K. Watanabe, Y. Nonaka, K. Suenaga, E. Saitoh, J. Haruyama
Formaat:	Artigo
Taal:	Inglês
Gepubliceerd in:	AIP Publishing LLC 2026-04-01
Reeks:	APL Electronic Devices
Online toegang:	https://pubs.aip.org/aip/aed/article-pdf/doi/10.1063/5.0311764/20967538/026106_1_5.0311764.pdf
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