Diamond dislocations analysis by X-ray topography
The dislocation identification method using X-ray topography by reflection mode geometry was applied to characterize IIa, Ib and highly B doped high pressure high temperature (HPHT) grown crystals. In both IIa and Ib crystals, dislocations are found to propagate in the <111> grown direction, with do...
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| Autor principal: | |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Taylor & Francis Group
2022-12-01
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| Col·lecció: | Functional Diamond |
| Matèries: | |
| Accés en línia: | http://dx.doi.org/10.1080/26941112.2022.2149279 |
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