A Hybrid Active Neutral Point Clamped Inverter Utilizing Si and Ga₂O₃ Semiconductors: Modelling and Performance Analysis

In this paper, the performance of an active neutral point clamped (ANPC) inverter is evaluated, which is developed utilizing both silicon (Si) and gallium trioxide (Ga₂O₃) devices. The hybridization of semiconductor devices is performed since the production volume and fabricati...

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Autores principales:	Sheikh Tanzim Meraj, Nor Zaihar Yahaya, Molla Shahadat Hossain Lipu, Jahedul Islam, Law Kah Haw, Kamrul Hasan, Md. Sazal Miah, Shaheer Ansari, Aini Hussain
Formato:	Artigo
Lenguaje:	Inglês
Publicado:	MDPI AG 2021-11-01
Colección:	Micromachines
Materias:	power electronics ultrawide bandgap semiconductors neutral point clamped inverter silicon
Acceso en línea:	https://www.mdpi.com/2072-666X/12/12/1466
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